, d na. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 silicon npn power transistor BU100 description ? collector-emitter sustaining voltage- : vceo(sus)= 60v(min.) ? low collector saturation voltage- : vce(sat)= 3.3v(max.)@ lc= 8a applications ? designed for horizontal deflection output stage of ctv receivers and high voltage.fast switching and industrial applications. absolute maximum ratings(ta=25'c) symbol vcbo vceo vebo ic icm pc tj tstg parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current-continuous collector current-peak repetitive collector power dissipation @ tc 75 c junction temperature storage temperature range value 150 60 7 10 15 15 200 -55-200 unit v v v a a w 'c 'c 3 pin j 1.base 1 . [ 2. a/iitter ^| 3. collect or (case) 2 to-3 package v"\ r*~n~*1 | 1 j c i i -4*-dspl *-k ?. l-* /-bo xa'iss. / i t ^? g-? $) g b vc_^-x' t \n iniii cum min max a 3900 b 2530 x&? c 7.80 8.30 d 0.90 1 10 i 40 t .60 g 10.32 h $46 k 11*5 1350 l 1675 1?05 n 1940 1962 _jj_ 400 -12fl u ag.go 3020 v 430 4sq nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
isc silicon npn power transistor BU100 electrical characteristics tc=25c unless otherwise specified symbol vceo(sus) v(br)cbo v(br)ebo vce(sat) vse(sat) icbo iebo hfe fr parameter collector-emitter sustaining voltage collector-base breakdown voltage emitter-base breakdown voltage collector-emitter saturation voltage base-emitter saturation voltage collector cutoff current emitter cutoff current dc current gain current-gain ? bandwidth product conditions lc= 100ma; ib= 0 lc= 1ma;le=0 le=1ma;lc=0 lc= 8a; ib= 2.5a lc= 8a; ib= 2.5a vcb=120v;ie=0 veb= 7v; lc= 0 lc= 2a; vce= 2v lc=0.5a;vce=10v min 60 150 7 40 0.1 typ. max 3.3 2.2 10 10 90 unit v v v v v ua na mhz
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